Yongli Gao

Professor of Physics
PhD in Physics, Purdue University, 1986

473 Bausch & Lomb Hall
(585) 275-8574
Fax: (585) 273-3237



Professor Gao received his BS in Physics (1981) from the Central-South University of Technology, Changsha, Hunan, China, and his PhD in Physics (1986) from Purdue University, West Lafayette, Indiana. After a postdoctoral position in the Department of Chemical Engineering and Materials Science at the University of Minnesota, Professor Gao joined the University as an Assistant Professor of Physics in 1988. He was promoted to Associate Professor in 1994 and to Professor in 1999.

Research Overview

Professor Gao's research interests lie in the general areas of Chemical, Biological and Condensed Matter Physics, and particularly in the area of Surface Physics. His research involves the investigation of physical phenomena at solid surfaces and interfaces by examining their electronic and structural properties. His recent work has studied the electronic interactions and morphology of interfaces and interface formation; the structural and spectroscopic properties of nanostructures; the transient behavior of charge transfer across interfaces; interfaces in organic semiconductor devices; and ultrafast dynamics of photoexcited electrons in solids.

For further details, go to Professor Gao's home page at: http://www.pas.rochester.edu/~ygao.

Selected Publications

  • H. Ding and Y. Gao, “Evolution of the Unoccupied State in Cs-Doped Copper
    Phthalocyanine,” Appl. Phys. Lett. 92, 053309 (2008).
  • T. He, H. Ding, N. Peor, M. Lu, D.A. Corley, B. Chen, Y. Ofir, Y. Gao, S.
    Yitzchaik, and J. Tour, “Silicon/Molecule Interfacial Electronic
    Modifications,” J. Am. Chem. Soc. 130, 1699 (2008).
  • H. Ding, K. Green, and Y. Gao, “Electronic Structure Modification of
    Copper Phthalocyanine (CuPc) Induced by Intensive Na Doping,” Chem. Phys.
    Lett., 454, 229, (2008).
  • H. Ding, Y. Gao, M. Cinchetti, J.-P. Wustenberg, M. Sanchez-Albaneda, O.
    Andreyev, M. Bauer, and M. Aeschlimann, “Spin Injection and Spin Dynamics
    at the CuPc/GaAs Interface,” Phys. Rev. B78, 075311 (2008).
  • M. Cinchetti, K. Heimer, J.-P. Wüstenberg, O. Andreyev, M. Bauer, S. Lach,
    C. Ziegler, Y. Gao, and M. Aeschlimann, “Determination of spin injection
    and transport in a ferromagnet/organic semiconductor heterojunction by
    two-photon photoemission,” Nature Material, 8, 115 (2008).
  • Y. Gao, “Organic/Metal Interface Properties,” in Introduction to Organic
    Optoelectronic Materials and Devices, Ed. S. Sun and L. Dalton, 637
    (Taylor & Francis CRC Press, New York, 2008).
  • H. Ding and Y. Gao, “Electronic structure at rubrene metal interfaces,”
    Appl. Phys. A95, 89 (2009).
  • H.J. Ding, Kiwan Park, and Y. Gao, “Evolution of the Unoccupied States in
    Alkali Metal-doped Organic Semiconductor,” J. Elec. Spec. Relat. Phen.
    174, 45 (2009).
  • Huanjun Ding, Kiwan Park, Yongli Gao, Do Young Kim and Franky So,
    “Electronic structure and interactions of LiF doped tris
    (8-hydroxyquinoline) aluminum (Alq),” Chem. Phys. Lett. 473, 92 (2009).
  • J. H. Wei, Y.L. Gao, and X.R.Wang, “Inverse Square-Root Field Dependence
    of Conductivity in Organic Field-Effect Transistors,” Appl. Phys. Lett.
    94, 073301 (2009).
  • Do Young Kim, Jegadesan Subbiah, Galileo Sarasqueta, and Franky So,
    Huanjun Ding, Irfan  and Yongli Gao, “The effect of molybdenum oxide
    interlayer on organic photovoltaic cells,” Appl. Phys. Lett. 95, 093304
  • D.Y. Kim, F. So, and Y. Gao, “Aluminum phthalocyanine chloride/C-60
    organic photovoltaic cells with high open-circuit voltages,”
    Sol. E. Mat. Sol. Cells 93, 1688 (2009).
  • Y. Gao, “Interface in Organic Semiconductor Devices: Dipole, Doping, Band
    Bending, and  Growth,” in Organic Electronics :Materials, Processing,
    Devices, and Applications, Ed. F. So, 141 (Taylor & Francis CRC Press, New
    York, 2009).
  • Yasuhiro Shirai, Jason M. Guerrero, Takashi Sasaki, Tao He, Huanjun Ding,
    Guillaume Vives, Byung-Chan Yu, Long Cheng, Austen K. Flatt, Priscilla G.
    Taylor, Yongli Gao, and James M. Tour, “Fullerene/Thiol-Terminated
    Molecules,” J. Org. Chem. 74, 7885 (2009).
  • C. C. Zhao, X. H. Chen, C. Gao, M. K. Ng, H. Ding, K. Park, and Y. Gao,
    “New organic semiconductors for thin-film transistors: Synthesis,
    characterization, and performance of 4H-indeno[1,2-b]thiophene
    derivatives,” Synthetic Metals, 159, 995, (2009).
  • Y. Gao, “Surface Analytical Studies of Interfaces in Organic Semiconductor
    Devices,” Materials Sci. Engr. Rep. 68, 39 (2010).
  • Irfan, H. Ding, and Yongli Gao, D.-Y. Kim, J. Subbiah, G. Sarasqueta, and
    F. So, “Energy level evolution of molybdenum trioxide inter-layer between
    indium-tin-oxide (ITO) and organic semiconductor,” Appl. Phys. Lett., 96,
    073304 (2010).
  • H. Ding, C. Reese, A. J. Mäkinen, Z. Bao, and Y. Gao, “Angle-resolved
    photoemission study of rubrene single crystal,” Appl. Phys. Lett. 96,
    222106 (2010).
  • M. Zhang, Irfan, H. Ding, Yongli Gao, and C. W. Tang, “Organic Schottky
    barrier solar cells based on MoOX/C60 junction,” Appl. Phys. Lett. 96,
    183301 (2010).
  • Irfan, H. Ding, Yongli Gao, C. Small, D.Y. Kim, J. Subbiah, and F. So,
    “Energy level evolution of air and oxygen exposed molybdenum trioxide
    films,” Appl. Phys. Lett. 96, 243307 (2010).